About Invention:

The present invention relates to the to a preparation and fabrication of Aluminum & Europium co-doped beta gallium oxide thin films for LEDs device. Al & Eu co-doped Beta gallium oxide thin films were fabricated for LEDs device through PVD RF co-sputtering route. Co- sputtering is a unique deposition method where multi-cathode PVD systems are used to simultaneously deposit both the dopants as well as the host material at the same time. The deposition parameters, viz, plasma power, substrate temperature and deposition rate (and time) can be varied to vary the percentage of co-doping. Simultaneous Co-sputtered Al and Eu doped beta gallium oxide can be used for application of opto-electronics device such as LEDs, laser diode. Results suggested that Al & Eu doped beta gallium thin films have potential to be used for LEDs device fabrication, with longer life.